Документация
Reflective optical sensor with transistor output
У поставщика
ПроизводительVishay
КатегорияДатчики разное
У поставщиков
940 шт.
Норм. уп.: 1000
Цены поставщиков
Склад 13
В наличии:940 шт
Срок поставки: до недели
Норм. уп.: 1000
Минимальная партия: 8 шт
| Кол-во, шт. | Цена, ₽ |
|---|---|
| от 1 | 105,58 |
| от 36 | 98,91 |
| от 72 | 93,61 |
| от 143 | 88,96 |
| от 286 | 85,82 |
Описание
Оптический отражательный датчик TCRT1000 от Vishay с выходным транзистором. Работает на длине волны 950 нм, ток до 50 мА, корпус для сквозного монтажа. Подходит для детекции объектов в промышленной автоматике и бытовой электронике.
Технические характеристики
| Выводы | Straight leads |
| Moq pcs | 1000 |
| Тип монтажа | Выводной |
| Упаковка | насыпью |
| Output Type | Phototransistor |
| Описание | Reflective Optical Sensor With Transistor Output |
| Артикул | TCRT1000 |
| Тип корпуса | leaded |
| Mounting Type | Through Hole |
| Detector type | phototransistor |
| Размеры мм | 7 x 4 x 2.5 |
| Код заказа | TCRT1000 |
| Package / Case | PCB Mount |
| Sensing Method | Reflective |
| Sensing Distance | 0.157" (4mm) |
| Описание | Optical Switches, Reflective, Phototransistor Output Reflective Sensor w/Transistor Output |
| Forward voltage V | 1.6 |
| Operating range mm | 0.2 to 4 |
| Пик. длина волны | 950 |
| Lead free soldering | Да |
| Collector current mA | 0.7 |
| Cross talk current uA | 1 |
| Emitter wavelength nm | 950 |
| Forward voltage max V | 1.7 |
| Soldering temperature C | 260 |
| Тип упаковки | Bulk (россыпь) |
| Collector current min mA | 0.6 |
| Daylight blocking filter | Да |
| Collector dark current nA | 200 |
| Emitter reverse voltage V | 5 |
| Typical output current mA | 0.7 |
| Emitter forward current mA | 100 |
| Peak operating distance mm | 1 |
| Ambient temperature range C | -40 to +85 |
| Storage temperature range C | -40 to +100 |
| Emitter power dissipation mW | 170 |
| Описание (англ.) | 950 nm 50 mA Through Hole Reflective Optical Sensor with Transistor Output |
| Detector collector current mA | 50 |
| Detector power dissipation mW | 100 |
| Current - Collector (Ic) (Max) | 50 mA |
| Emitter junction temperature C | 100 |
| Current - DC Forward (If) (Max) | 50 mA |
| Collector emitter voltage min V | 32 |
| Detector junction temperature C | 100 |
| Emitter collector voltage min V | 5 |
| Emitter forward surge current A | 1.5 |
| Forward voltage test conditions | IF = 100 mA |
| Peak wavelength test conditions | IF = 100 mA |
| Soldering temperature condition | 2 mm distance to package, t <= 5 s |
| Collector current test conditions | VCE = 5 V, IF = 20 mA, d = 1 mm |
| Sensor total power dissipation mW | 270 |
| Cross talk current test conditions | VCE = 5 V, IF = 20 mA |
| Detector collector emitter voltage V | 32 |
| Detector emitter collector voltage V | 5 |
| Collector dark current test conditions | VCE = 10 V, IF = 0 A, E = 0 lx |
| Collector emitter saturation voltage V | 0.3 |
| Emitter forward surge current condition | t <= 100 us |
| Collector emitter voltage test conditions | IC = 1 mA |
| Emitter collector voltage test conditions | IE = 100 uA |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Collector emitter saturation voltage test conditions | IF = 20 mA, IC = 0.1 mA, d = 1 mm |
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