Документация
Силовой модуль SKM200GB12T4
У поставщика
У поставщиков
6 шт.
Норм. уп.: 12
Цены поставщиков
Склад 13
В наличии:6 шт
Срок поставки: до недели
Норм. уп.: 12
| Кол-во, шт. | Цена, ₽ |
|---|---|
| от 1 | 15 732,09 |
| от 2 | 15 148,89 |
| от 3 | 14 673,89 |
| от 4 | 14 321,31 |
| от 5 | 14 059,06 |
Описание
Силовой модуль SKM200GB12T4 от Semikron. Рассчитан на ток 200 А и напряжение 1200 В, выполнен в корпусе SEMITRANS 4. Применяется в преобразователях частоты и промышленной автоматике.
Технические характеристики
| Тип | Силовое |
| Серия | SEMITRANS 3 |
| Вес | 325 g |
| Корпус | SEMITRANS® 4 Case A-14 |
| Remarks | Case temperature limited to Tc = 125°C max., Recommended Top = -40 ... +150°C, Product reliability results valid for Tj = 150°C |
| Особенности | IGBT4 = 4th generation fast trench IGBT (Infineon), CAL4 = Soft switching 4th generation CAL-diode, Isolated copper baseplate using DBC technology (Direct Bonded Copper), Increased power cycling capability, With integrated gate resistor, For higher switching frequencies up to 20kHz, UL recognized, file no. E63532 |
| Тип монтажа | Screw mounting (M6 to heat sink, M6 to terminals) |
| Технология | IGBT4 (4th generation fast trench IGBT, Infineon), CAL4 (Soft switching 4th generation CAL-diode) |
| Описание | Fast IGBT4 Module with CAL4 diode, SEMITRANS 3 package |
| Артикул | SKM200GB12T4 |
| Производитель | SEMIKRON |
| Чувствительность к ЭСР | Yes, IEC 60747-1 Chapter IX |
| UL признан | Yes, file no. E63532 |
| Igbt characteristics | Fall time tf: 82ns; Rise time tr: 40ns; Gate charge qg: 1130nC; Turn on energy eon: 21mJ; Turn off energy eoff: 20mJ; Input capacitance cies: 12.3nF; Output capacitance coes: 0.81nF; Turn on delay time tdon: 185ns; Turn off delay time tdoff: 425ns; Gate threshold voltage vgeth: 5V (min), 5.8V (typ), 6.5V (max); On state resistance rce tj25: 5.00mΩ (typ), 5.75mΩ (max); On state resistance rce tj150: 7.50mΩ (typ), 8.00mΩ (max); Internal gate resistance rgint: 3.8Ω; Reverse transfer capacitance cres: 0.69nF; Thermal resistance junction to case rthjc: 0.14K/W; Collector emitter cutoff current ices tj25: 2.7mA (max); Collector emitter threshold voltage vce0 tj25: 0.8V (typ), 0.9V (max); Collector emitter threshold voltage vce0 tj150: 0.7V (typ), 0.8V (max); Collector emitter saturation voltage vcesat ic200a tj25: 1.80V (typ), 2.05V (max); Collector emitter saturation voltage vcesat ic200a tj150: 2.20V (typ), 2.40V (max) |
| Типовые применения | AC inverter drives, UPS, Electronic welders at fsw up to 20 kHz |
| Module characteristics | Stray inductance lce: 15nH (typ), 20nH (max); Isolation voltage visol: 4000V; Max case temperature tc: 125°C; Storage temperature tstg: -40...125°C; Operating temperature top: -40...150°C; Terminal current rms it rms: 500A; Mounting torque heat sink ms: 3...5 Nm; Mounting torque terminals mt: 2.5...5 Nm; Terminal chip resistance rcc ee tc25: 0.25mΩ; Terminal chip resistance rcc ee tc125: 0.5mΩ; Thermal resistance case to sink rthcs: 0.02K/W (typ), 0.038K/W (max) |
| Igbt absolute maximum ratings | Темп. перехода Tj: -40...175°C; Short circuit time tpsc: 10µs; Gate emitter voltage vges: -20...20V; Collector emitter voltage vces: 1200V; Nominal collector current icnom: 200A; Continuous collector current ic tc25: 313A; Continuous collector current ic tc80: 241A; Repetitive peak collector current icrm: 600A |
| Inverse diode characteristics | Forward voltage vf0 tj25: 1.3V (typ), 1.5V (max); Forward voltage vf0 tj150: 0.9V (typ), 1.1V (max); Forward resistance rf tj25: 4.5mΩ (typ), 5.1mΩ (max); Forward resistance rf tj150: 6.3mΩ (typ), 6.8mΩ (max); Reverse recovery charge qrr: 33µC; Reverse recovery energy err: 13mJ; Forward voltage vf if200a tj25: 2.20V (typ), 2.52V (max); Forward voltage vf if200a tj150: 2.15V (typ), 2.47V (max); Peak reverse recovery current irrm: 174A; Thermal resistance junction to case rthjc: 0.26K/W |
| Inverse diode absolute maximum ratings | Forward current if tc25: 229A; Forward current if tc80: 172A; Темп. перехода Tj: -40...175°C; Surge forward current ifsm: 990A; Nominal forward current ifnom: 200A; Repetitive peak forward current ifrm: 600A |
| Напряжение, В | 1200 |
| Ток, А | 200 |
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