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SFH 213 FA
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Фотодиод 5мм/750-1100нм/10° SFH 213 FA

Артикул:766732
У поставщика
Производительams-Osram
У поставщиков
2 421 шт.
Норм. уп.: 1000
шт
Выгоднее:
Откуда взять
СкладЦена за штСуммаВ наличииУсловия
Заказ со склада «Склад 13» с этой позицией — 766,20 ₽. До заказа без доплаты не хватает 16 533,80 ₽; пока не набрано, 490,00 ₽ распределятся по ценам позиций этого склада.
15 шт · Склад 13 · 766,20 ₽
Описание

Фотодиод SFH 213 FA от AMS-OSRAM — это PIN-фотодиод в стандартном 5-мм корпусе T-1 ¾. Работает в спектральном диапазоне 750–1100 нм с пиком чувствительности на 900 нм, имеет узкий угол обзора 10° и низкий темновой ток 1 нА. Применяется в промышленной автоматике, системах дистанционного управления и оптических датчиках.

Технические характеристики
Дата2015-12-23
Корпус5mm LED plastic package
УпаковкаPlease use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred.
Версия1.3
Glossary1) Typical Values: Due to the special conditions of the manufacturing processes of LED, the typical data or calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily correspond to the actual parameters of each single product, which could differ from the typical data and calculated correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data will be changed without any further notice.
Тип монтажаTHT
AttentionThe information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. If printed or downloaded, please find the latest version in the Internet.
КомпонентSFH 213 FA
ПайкаMethod: TTW Soldering; Охлаждение: ca. 2 K/s; Delta t: < 150 K; Стандарт: IEC-61760-1 TTW; Preheating: ca. 3.5 K/s typical; Max contact time: 10s max., max. contact time 5s per wave; Темп. диапазон: 235 degC - 260 degC
РазмерыPad 1: анод; Контур корпуса: 27: 1.063 inch; 29: 1.142 inch; 0.4: 0.016 inch; 0.6: 0.024 inch; 1.2: 0.047 inch; 1.5: 0.102 inch; 1.8: 0.071 inch; 4.8: 0.189 inch; 5.1: 0.201 inch; 5.5: 0.217 inch; 5.7: 0.224 inch; 5.9: 0.232 дюйма; 7.5: 0.295 inch; 7.8: 0.307 inch; 8.2: 0.323 inch; 9.0: 0.354 inch; Recommended solder pad: Dimensions in mm
DisclaimerLanguage english will prevail in case of any discrepancies or deviations between the two language wordings.
ОписаниеSilicon PIN Photodiode
ПрименениеHigh speed photointerrupters, Industrial electronics, For control and drive circuits
Стандарт ESDANSI/ESDA/JEDEC JS-001 - HBM
Тип корпуса5mm Radial (T 1 3/4), Epoxy
Published byOSRAM Opto Semiconductors GmbH, Leibnizstraße 4, D-93055 Regensburg, www.osram-os.com © All Rights Reserved.
Код заказаQ62702P1671
Half angle typ+/- 10 deg
Емкость, тип.11pF
Примерный вес0.4g
Время нарастания/спада, тип.0.005us
Тип. время переключения5ns
Critical componentsComponents used in life-support devices or systems must be expressly authorized for such purpose! Critical components* may only be used in life-support devices** or systems with the express written approval of OSRAM OS. *) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or the effectiveness of that device or system. **) Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health and the life of the user may be endangered.
Detection limit typ3.6e12 cm x Hz^1/2 / W
Типовое прямое напряжение1.3V
Макс. обратное напряжение20V
Dark current typ max1 (<= 5) nA
Photocurrent typ min90 (>= 65) uA
Напряжение ЭСР2000V
Quantum yield chip typ0.93 Electrons/Photon
Тип упаковкиBulk (россыпь)
Ток короткого замыкания, тип.42uA
Диап. темп. хр.-40 to 100 degC
Noise equivalent power typ0.028 pW/Hz^1/2
Radiant sensitive area typ1.00mm2
Условия теста емкостиVR=0V, f=1MHz, Ee=0
Диап. раб. темп.-40 to 100 degC
Макс. общая рассеиваемая мощность150mW
Wavelength range 10 percent750nm to 1100nm
Dark current test conditionsVR=20V
Open circuit voltage typ min380 (>= 300) mV
Photocurrent test conditionsVR=5V, lambda=870nm, Ee=1mW/cm2
Описание (англ.)Photodiode PIN 900nm U=1,3v Ir=1nA T-1 3/4 ± 10°
Quantum yield test conditionslambda=870nm
Spectral sensitivity chip typ0.65 A/W
Reverse voltage max short term50V (t < 2 min)
Rise fall time test conditionsVR=20V, RL=50ohm, lambda=850nm
Temperature coefficient vo typ-2.6 mV/K
Wavelength max sensitivity typ900nm
Detection limit test conditionsVR=20V, lambda=870nm
Условия измерения прямого напряженияIF=100mA, Ee=0
Temperature coefficient isc typ0.1 %/K
Open circuit voltage test conditionsEe=0.5mW/cm2, lambda=870nm
Spectral sensitivity test conditionslambda=870nm
Radiant sensitive area dimensions typ1 x 1 mm
Short circuit current test conditionsEe=0.5mW/cm2, lambda=870nm
Noise equivalent power test conditionsVR=20V, lambda=870nm
Temperature coefficient isc test conditionslambda=870nm

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