Документация
Сборка из полевых транзисторов, N/P-канальный, 30 В, -6 А/7 А, 1.3 Вт
У поставщика
ПроизводительNIKO-SEM
КатегорияТранзисторы полевые (FETs, MOSFETs)
У поставщиков
3 шт.
Норм. уп.: 50
Цены поставщиков
Склад 13
В наличии:3 шт
Срок поставки: до недели
Норм. уп.: 50
Минимальная партия: 6 шт
| Кол-во, шт. | Цена, ₽ |
|---|---|
| от 1 | 39,76 |
| от 20 | 37,05 |
| от 50 | 34,52 |
| от 100 | 32,65 |
| от 200 | 30,92 |
Описание
Сборка из полевых транзисторов NIKO-SEM P2103NVG объединяет N-канальный и P-канальный ключи в компактном корпусе SO-8. Компонент рассчитан на напряжение 30 В, ток до -6 А (P-канал) и 7 А (N-канал) при мощности 1.3 Вт. Подходит для схем управления питанием и защиты в портативной и бытовой электронике.
Технические характеристики
| Корпус | SOP-8 |
| Тип монтажа | SMD |
| Описание | N- & P-Channel Enhancement Mode Field Effect Transistor |
| Размер e | 1.27mm |
| Dimension j | 0.22mm |
| Fall time n | 35ns |
| Fall time p | 75ns |
| Артикул | P2103NV |
| Rise time n | 10ns |
| Rise time p | 17ns |
| Channel type | N-Channel & P-Channel |
| Производитель | NIKO-SEM |
| Dimension a max | 5.0mm |
| Dimension a min | 4.8mm |
| Dimension a typ | 4.9mm |
| Dimension b max | 4.0mm |
| Dimension b min | 3.8mm |
| Dimension b typ | 3.9mm |
| Dimension c max | 6.2mm |
| Dimension c min | 5.8mm |
| Dimension c typ | 6.0mm |
| Dimension d max | 0.51mm |
| Dimension d min | 0.38mm |
| Dimension d typ | 0.445mm |
| Dimension f max | 1.75mm |
| Dimension f min | 1.35mm |
| Dimension f typ | 1.55mm |
| Dimension g max | 0.25mm |
| Dimension g min | 0.1mm |
| Dimension g typ | 0.175mm |
| Dimension h max | 0.83mm |
| Dimension h min | 0.5mm |
| Dimension h typ | 0.715mm |
| Dimension i max | 0.25mm |
| Dimension i min | 0.18mm |
| Dimension i typ | 0.254mm |
| Dimension k max | 8° |
| Dimension k min | 0° |
| Dimension k typ | 4° |
| Lead temperature | 275°C |
| Forward voltage n | 1V |
| Forward voltage p | -1V |
| Gate body leakage n | ±100nA |
| Gate body leakage p | ±100nA |
| Gate drain charge n | 12nC |
| Gate drain charge p | 12nC |
| Напряжение затвор-исток | ±20V |
| Input capacitance n | 1700pF |
| Input capacitance p | 970pF |
| Total gate charge n | 40nC |
| Total gate charge p | 28nC |
| Gate source charge n | 28nC |
| Gate source charge p | 6nC |
| Output capacitance n | 380pF |
| Output capacitance p | 370pF |
| Turn on delay time n | 20ns |
| Turn on delay time p | 20ns |
| Turn off delay time n | 120ns |
| Turn off delay time p | 160ns |
| Drain source voltage n | 30V |
| Drain source voltage p | -30V |
| Power dissipation tc25 | 2W |
| Power dissipation tc70 | 1.3W |
| Pulsed drain current n | 28A |
| Pulsed drain current p | -24A |
| Pulsed source current n | 6A |
| Pulsed source current p | -6A |
| Reverse recovery time n | 15.5ns |
| Reverse recovery time p | 15.5ns |
| Тип упаковки | Tape and Reel (лента в катушке) |
| On state drain current n | 28A |
| On state drain current p | -24A |
| Reverse recovery charge n | 7.9nC |
| Reverse recovery charge p | 7.9nC |
| Forward transconductance n | 8S |
| Forward transconductance p | 7S |
| Continuous source current n | 3A |
| Continuous source current p | -3A |
| Gate threshold voltage n max | 2.5V |
| Gate threshold voltage n min | 0.8V |
| Gate threshold voltage n typ | 1.5V |
| Gate threshold voltage p max | -2.5V |
| Gate threshold voltage p min | -0.8V |
| Gate threshold voltage p typ | -1.5V |
| Описание (англ.) | field-effect transistor assembly, N+P-channel, 30V -6/7A 1.3W |
| Reverse transfer capacitance n | 260pF |
| Reverse transfer capacitance p | 180pF |
| Continuous drain current n tc25 | 7A |
| Continuous drain current n tc70 | 6A |
| Continuous drain current p tc25 | -6A |
| Continuous drain current p tc70 | -5A |
| Zero gate voltage drain current n | 1µA |
| Zero gate voltage drain current p | -1µA |
| Junction storage temperature range | -55 to 150°C |
| Drain source breakdown voltage n min | 30V |
| Drain source breakdown voltage p min | -30V |
| Термосопротивление переход-среда | 62.5°C/W |
| Zero gate voltage drain current n tj55 | 10µA |
| Zero gate voltage drain current p tj55 | -10µA |
| Drain source on state resistance n vgs10 id7a max | 21mΩ |
| Drain source on state resistance n vgs10 id7a typ | 14mΩ |
| Drain source on state resistance n vgs45 id6a max | 32mΩ |
| Drain source on state resistance n vgs45 id6a typ | 21mΩ |
| Drain source on state resistance p vgs10 id6a max | 35mΩ |
| Drain source on state resistance p vgs10 id6a typ | 28mΩ |
| Drain source on state resistance p vgs45 id5a max | 60mΩ |
| Drain source on state resistance p vgs45 id5a typ | 44mΩ |
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