Документация
Микросхема NCP1654BD65R2G
У поставщика
У поставщиков
993 шт.
Норм. уп.: 2500
Цены поставщиков
Склад 13
В наличии:993 шт
Срок поставки: до недели
Норм. уп.: 2500
Минимальная партия: 14 шт
| Кол-во, шт. | Цена, ₽ |
|---|---|
| от 1 | 55,90 |
| от 40 | 51,41 |
| от 79 | 47,73 |
| от 158 | 44,95 |
| от 315 | 42,90 |
Описание
Микросхема NCP1654BD65R2G от ON Semiconductor представляет собой контроллер коррекции коэффициента мощности (PFC), работающий в режиме переходной проводимости (CrM). Предназначена для построения высокоэффективных импульсных источников питания и преобразователей. Обеспечивает высокий коэффициент мощности и низкий уровень гармонических искажений, что соответствует современным стандартам энергопотребления.
Технические характеристики
| Корпус | 751 |
| ESD (мм) | 200V |
| Package | DIP8, SO8 |
| ЭСР HBM | 2000V |
| Корпус | SO-8 |
| Без свинца | Да |
| Тип монтажа | SMD |
| Shipping | 2500 / Tape & Reel |
| Frequency | 65 kHz, 133 kHz, 200 kHz |
| Кол-во выводов | 8 |
| Описание | Power Factor Controller for Compact and Robust, Continuous Conduction Mode Pre-Converters |
| Артикул | NCP1654BD65R2G |
| Производитель | onsemi |
| Vcontrol max | 3.6V |
| Vcontrol min | 0.6V |
| Duty cycle range | 0-97% |
| Макс. вх. напр. | 10V |
| Pin6 bias current | ±500nA |
| Vcc transient max | 25V |
| Vcc max continuous | 20V |
| Vcontrol delta max | 3.3V |
| Vcontrol delta min | 2.7V |
| Vcontrol delta typ | 3.0V |
| Latch up protection | ±100mA |
| Startup current max | 75µA |
| Макс. ток отключения | 400µA |
| Shutdown current typ | 300µA |
| Voltage reference max | 2.575V |
| Voltage reference min | 2.425V |
| Voltage reference typ | 2.5V |
| Power dissipation ta70 | 450mW |
| Pin4 input bias current | ±500nA |
| Макс. темп. хр. | 150°C |
| Мин. темп. хр. | -65°C |
| Vcc disable voltage max | 9.75V |
| Vcc disable voltage min | 8.25V |
| Vcc disable voltage typ | 9.0V |
| Vcc uvlo hysteresis min | 1.0V |
| Vcc uvlo hysteresis typ | 1.5V |
| Error amplifier gain max | 300µS |
| Error amplifier gain min | 100µS |
| Error amplifier gain typ | 200µS |
| Gate drive fall time typ | 40ns |
| Gate drive rise time typ | 60ns |
| Iboost source current max | 260µA |
| Iboost source current min | 190µA |
| Iboost source current typ | 228µA |
| Output drive sink current | 1.5A |
| Uvp propagation delay typ | 500ns |
| Vcc startup threshold max | 11.4V |
| Vcc startup threshold min | 9.6V |
| Vcc startup threshold typ | 10.5V |
| Thermal shutdown threshold | 150°C |
| Uvp lockout hysteresis typ | 4% |
| Output drive source current | 1.5A |
| Макс. температура перехода | 150°C |
| Switching frequency 65khz max | 72kHz |
| Switching frequency 65khz min | 58kHz |
| Switching frequency 65khz typ | 65kHz |
| Gate drive sink resistance max | 18Ω |
| Gate drive sink resistance typ | 6.6Ω |
| Lead temperature soldering 10s | 300°C |
| Switching frequency 133khz max | 146kHz |
| Switching frequency 133khz min | 120kHz |
| Switching frequency 133khz typ | 133kHz |
| Switching frequency 200khz max | 220kHz |
| Switching frequency 200khz min | 180kHz |
| Switching frequency 200khz typ | 200kHz |
| Overvoltage threshold ratio max | 107% |
| Overvoltage threshold ratio min | 103% |
| Overvoltage threshold ratio typ | 105% |
| Thermal shutdown hysteresis typ | 30°C |
| Current sense offset voltage typ | 10mV |
| Gate drive source resistance max | 20Ω |
| Gate drive source resistance typ | 9.0Ω |
| Uvp activate threshold ratio max | 12% |
| Uvp activate threshold ratio min | 4% |
| Uvp activate threshold ratio typ | 8% |
| Multiplier output current im1 typ | 1.9µA |
| Multiplier output current im2 min | 1.5µA |
| Multiplier output current im2 typ | 4.7µA |
| Multiplier output current im3 typ | 28.1µA |
| Multiplier output current im4 typ | 84.4µA |
| Overpower current threshold 1 max | 308µA |
| Overpower current threshold 1 min | 186µA |
| Overpower current threshold 1 typ | 222µA |
| Overpower current threshold 2 max | 110µA |
| Overpower current threshold 2 min | 62µA |
| Overpower current threshold 2 typ | 75µA |
| Overvoltage propagation delay typ | 500ns |
| Error amplifier current capability | ±28µA |
| Макс. темп. перехода | 125°C |
| Мин. темп. перехода | -40°C |
| Overpower limitation threshold typ | 200µVA |
| Thermal resistance junction to air | 178°C/W |
| Uvp deactivate threshold ratio max | 18% |
| Uvp deactivate threshold ratio min | 6% |
| Uvp deactivate threshold ratio typ | 12% |
| Vout low detect threshold ratio max | 96% |
| Vout low detect threshold ratio min | 94% |
| Vout low detect threshold ratio typ | 95% |
| Overcurrent protection threshold max | 215µA |
| Overcurrent protection threshold min | 185µA |
| Overcurrent protection threshold typ | 200µA |
| Vout low detect hysteresis ratio typ | 0.5% |
| Brown out voltage threshold rising max | 1.38V |
| Brown out voltage threshold rising min | 1.22V |
| Brown out voltage threshold rising typ | 1.30V |
| Brown out voltage threshold falling max | 0.75V |
| Brown out voltage threshold falling min | 0.65V |
| Brown out voltage threshold falling typ | 0.7V |
| Operating current no load switching max | 6.0mA |
| Operating current no load switching typ | 4.7mA |
| Multiplier output current im2 max 0 125c | 8.8µA |
| Operating current no load no switching max | 5.0mA |
| Operating current no load no switching typ | 3.7mA |
| Multiplier output current im2 max neg40 125c | 9.8µA |
| Частота, МГц | 65 |
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