Документация
Драйвер полумостовой верхнего и нижнего плеча 200В 0.13/0.27А 8-SOIC
У поставщика
ПроизводительInfineon
КатегорияДрайверы Full и Half-Bridge
У поставщиков
659 шт.
Норм. уп.: 2500
Цены поставщиков
Склад 13
В наличии:659 шт
Срок поставки: до недели
Норм. уп.: 2500
Минимальная партия: 12 шт
| Кол-во, шт. | Цена, ₽ |
|---|---|
| от 1 | 68,07 |
| от 31 | 62,88 |
| от 62 | 58,65 |
| от 123 | 55,48 |
| от 245 | 53,11 |
Описание
Драйвер полумоста от Infineon управляет верхним и нижним плечом с напряжением до 200 В. Ток управления составляет 0,13 А на запирание и 0,27 А на отпирание, корпус — компактный SOIC-8. Работает в широком диапазоне температур от -40 до +125 °C. Применяется в импульсных источниках питания и промышленной автоматике.
Технические характеристики
| Корпус | SOIC8 |
| Особенности | Floating channel designed for bootstrap operation, Fully operational to +200V, Tolerant to negative transient voltage, dV/dt immune, Gate drive supply range from 10V to 20V, Undervoltage lockout, 3.3V, 5V, and 15V input logic compatible, Cross-conduction prevention logic, Internally set deadtime, High-side output in phase with input, Shutdown input turns off both channels, Matched propagation delay for both channels, RoHS compliant |
| Описание | Half-bridge driver, high and low side, 200V, 0.13/0.27A, 8-SOIC |
| Артикул | IRS2004STRPBF |
| Product summary | V out: 10V - 20V; Deadtime typ: 520ns; Ton toff typ: 680ns / 150ns; V offset max: 200V; Io source sink: +/- 130mA / 270mA |
| Lead assignments | 1: VCC; 2: IN; 3: SD; 4: COM; 5: LO; 6: VS; 7: HO; 8: VB |
| Тип упаковки | Tape and Reel (лента в катушке) |
| Предельные значения | Ts storage temperature: Max: 150°C; Min: -55°C; Tj junction temperature: 150°C; Vin logic input voltage: Max: VCC + 0.3V; Min: -0.3V; Vlo low side output voltage: Max: VCC + 0.3V; Min: -0.3V; Vho high side floating output voltage: Max: VB + 0.3V; Min: VS - 0.3V; Pd package power dissipation at ta 25c: Pdip: 1.0W; Soic: 0.625W; Vb high side floating absolute voltage: Max: 225V; Min: -0.3V; Tl lead temperature soldering 10 seconds: 300°C; Vcc low side and logic fixed supply voltage: Max: 25V; Min: -0.3V; Vs high side floating supply offset voltage: Max: VB + 0.3V; Min: VB - 25V; Rthja thermal resistance junction to ambient: Pdip: 125°C/W; Soic: 200°C/W; Dvs dt allowable offset supply voltage transient: 50V/ns |
| Описание (англ.) | DRIVER HALF-BRIDGE 8-SOIC |
| Recommended operating conditions | Ta ambient temperature: Max: 125°C; Min: -40°C; Vin logic input voltage: Max: VCC; Min: 0V; Vlo low side output voltage: Max: VCC; Min: 0V; Vho high side floating output voltage: Max: VB; Min: VS; Vcc low side and logic fixed supply voltage: Max: 20V; Min: 10V; Vs high side floating supply offset voltage: Max: 200V; Min: Note 2; Vb high side floating supply absolute voltage: Max: VS + 20V; Min: VS + 10V |
| Static electrical characteristics | Условия теста: VBIAS (VCC, VBS) = 15V, TA = 25°C; Vih logic 1 input voltage: Max: —; Min: 2.5V; Typ: —; Vil logic 0 input voltage: Max: 0.8V; Min: —; Typ: —; Vol low level output voltage: Max: 0.1V; Min: —; Typ: 0.02V; Test condition: IO = 2mA; Voh high level output voltage: Max: —; Min: VBIAS - 0.05V; Typ: VBIAS - 0.2V; Test condition: IO = 2mA; Vsd th negative going threshold: Max: 0.8V; Min: —; Typ: —; Vsd th positive going threshold: Max: —; Min: 2.5V; Typ: —; Test condition: VCC = 10V to 20V; Ilk offset supply leakage current: Max: 50µA; Min: —; Typ: —; Test condition: VB = VS = 200V; Iqbs quiescent vbs supply current: Max: 55µA; Min: —; Typ: 30µA; Test condition: VIN = 0V or 5V; Iqcc quiescent vcc supply current: Max: 270µA; Min: —; Typ: 150µA; Test condition: VIN = 0V or 5V; Iin plus logic 1 input bias current: Max: 10µA; Min: —; Typ: 3µA; Test condition: VIN = 5V; Iin minus logic 0 input bias current: Max: 5µA; Min: —; Typ: —; Test condition: VIN = 0V; Io minus output low short circuit pulsed current: Max: —; Min: 270mA; Typ: 600mA; Test condition: VO = 15V, PW ≤ 10µs; Io plus output high short circuit pulsed current: Max: —; Min: 130mA; Typ: 290mA; Test condition: VO = 0V, PW ≤ 10µs; Vccuv plus undervoltage positive going threshold: Max: 9.8V; Min: 8V; Typ: 8.9V; Vccuv minus undervoltage negative going threshold: Max: 9V; Min: 7.4V; Typ: 8.2V |
| Dynamic electrical characteristics | Dt deadtime: Max: 650ns; Min: 400ns; Typ: 520ns; Test condition: LS turn-off to HS turn-on & HS turn-on to LS turn-off; Условия теста: VBIAS (VCC, VBS) = 15V, CL = 1000pF, TA = 25°C; Mt delay matching: Max: 60ns; Min: —; Typ: —; Test condition: HS & LS turn-on/off; Tr turn on rise time: Max: 170ns; Min: —; Typ: 70ns; Tf turn off fall time: Max: 90ns; Min: —; Typ: 35ns; Ton turn on propagation delay: Max: 820ns; Min: —; Typ: 680ns; Test condition: VS = 0V; Tsd shutdown propagation delay: Max: 220ns; Min: —; Typ: 160ns; Toff turn off propagation delay: Max: 220ns; Min: —; Typ: 150ns; Test condition: VS = 200V |
| Рабочая температура | -40В°C ~ 125В°C |
| Тип монтажа | SMD |
Заметили ошибку в описании или параметрах?