Документация
Транзистор биполярный с изолированным затвором (IGBT) Trenchstop 5 IGBT
У поставщика
ПроизводительInfineon
КатегорияТранзисторы
У поставщиков
90 шт.
Норм. уп.: 30
Цены поставщиков
Склад 13
В наличии:90 шт
Срок поставки: до недели
Норм. уп.: 30
Минимальная партия: 4 шт
| Кол-во, шт. | Цена, ₽ |
|---|---|
| от 1 | 310,79 |
| от 8 | 292,56 |
| от 15 | 277,71 |
| от 30 | 266,67 |
| от 60 | 258,46 |
Описание
Транзистор IGBT Trenchstop 5 от Infineon выполнен в корпусе PG-TO-247-3. Компонент рассчитан на высокие рабочие токи и напряжения, отличается низкими потерями при переключении. Подходит для применения в промышленной автоматике, силовых преобразователях и инверторах.
Технические характеристики
| Маркировка | K50EES5 |
| Корпус | PG-TO-247-3 |
| Тип монтажа | Выводной |
| Описание | TRENCHSTOP 5 high speed soft switching IGBT with full current rated RAPID 1 diode |
| Gate charge | 120.0nC |
| Артикул | IKW50N65ES5 |
| Pin definition | Вывод 1: gate; Вывод 2: collector; Вывод 3: emitter; Backside: collector |
| Момент затяжки | 0.6Nm |
| Transconductance | 62.0S |
| Fall time tvj 25c | 47ns |
| Вх. емкость | 3100pF |
| Rise time tvj 25c | 27ns |
| Fall time tvj 175c | 51ns |
| Выходная емкость | 88pF |
| Rise time tvj 175c | 29ns |
| Темп. хранения | -55...+150°C |
| Diode pulsed current | 200.0A |
| Gate emitter voltage | ±20V |
| Gate charge condition | VGE=15V, VCE=520V, IC=50.0A |
| Температура пайки | 260°C |
| Turn on energy tvj 25c | 1.23mJ |
| Turn off energy tvj 25c | 0.55mJ |
| Turn on energy tvj 175c | 0.50mJ |
| Тип упаковки | Tube (туба) |
| Power dissipation tc 25c | 347.0W |
| Pulsed collector current | 200.0A |
| Switching time condition | VCE=400V, IC=50.0A, VGE=15V, RG=8.2Ω, inductive load |
| Turn off energy tvj 175c | 0.25mJ |
| Напряжение коллектор-эмиттер | 650V |
| Mounting torque condition | M3 screw |
| Power dissipation tc 100c | 173.0W |
| Switching energy condition | energy losses include tail and diode reverse recovery |
| Transconductance condition | VCE=20V, IC=50.0A |
| Turn on delay time tvj 25c | 23ns |
| Diode reverse recovery time | 127ns |
| Input capacitance condition | VCE=25V, VGE=0V, f=1MHz |
| Internal emitter inductance | 13.0nH |
| Turn off delay time tvj 25c | 207ns |
| Turn on delay time tvj 175c | 24ns |
| Gate emitter leakage current | 100nA |
| Output capacitance condition | VCE=25V, VGE=0V, f=1MHz |
| Обратная проходная емкость | 12pF |
| Turn off delay time tvj 175c | 218ns |
| Diode forward voltage tvj 25c | 1.40V |
| Diode reverse recovery charge | 250nC |
| Diode forward voltage tvj 125c | 1.45V |
| Diode forward voltage tvj 150c | 1.52V |
| Diode forward voltage tvj 175c | 1.59V |
| Diode pulsed current condition | tp limited by Tvjmax |
| Gate emitter voltage condition | tp ≤ 10µs, D < 0.010 |
| Рабочая температура перехода | -40...+175°C |
| Total switching energy tvj 25c | 1.78mJ |
| Soldering temperature condition | 1.6mm from case for 10s |
| Total switching energy tvj 175c | 0.75mJ |
| Diode reverse recovery condition | VR=400V, IF=50.0A, diF/dt=150A/µs |
| Diode forward voltage tvj 25c max | 1.70V |
| Gate emitter threshold voltage max | 4.8V |
| Gate emitter threshold voltage min | 3.2V |
| Gate emitter threshold voltage typ | 4.0V |
| Pulsed collector current condition | tp limited by Tvjmax |
| Collector current continuous tc 25c | 80.0A |
| Напряжение пробоя коллектор-эмиттер | 650V |
| Diode peak reverse recovery current | 15.5A |
| Тепловое сопротивление переход-среда | 40K/W |
| Collector current continuous tc 100c | 60.0A |
| Internal emitter inductance condition | measured 5mm from case |
| Thermal resistance igbt junction case | 0.55K/W |
| Diode reverse recovery softness factor | 0.5 |
| Gate emitter leakage current condition | VCE=0V, VGE=20V |
| Reverse transfer capacitance condition | VCE=25V, VGE=0V, f=1MHz |
| Thermal resistance diode junction case | 0.63K/W |
| Diode forward current continuous tc 25c | 80.0A |
| Diode forward voltage tvj 25c condition | VGE=0V, IF=50.0A |
| Collector current continuous tc 25c note | limited by Tvjmax |
| Diode forward current continuous tc 100c | 60.0A |
| Gate emitter threshold voltage condition | IC=0.50mA, VCE=VGE |
| Collector current continuous tc 100c note | limited by Tvjmax |
| Zero gate voltage collector current tvj 25c | 0.05µA |
| Collector emitter saturation voltage tvj 25c | 1.35V |
| Diode forward current continuous tc 25c note | limited by Tvjmax |
| Diode reverse recovery diode during turn off | 2120A/µs |
| Zero gate voltage collector current tvj 175c | 0.50µA |
| Collector emitter breakdown voltage condition | VGE=0V, IC=0.20mA |
| Collector emitter saturation voltage tvj 125c | 1.50V |
| Collector emitter saturation voltage tvj 150c | 1.60V |
| Collector emitter saturation voltage tvj 175c | 1.65V |
| Diode forward current continuous tc 100c note | limited by Tvjmax |
| Diode peak reverse recovery current condition | VR=400V, IF=50.0A, diF/dt=150A/µs |
| Zero gate voltage collector current condition | VCE=650V, VGE=0V |
| Zero gate voltage collector current tvj 25c max | 20µA |
| Collector emitter saturation voltage tvj 25c max | 1.70V |
| Diode reverse recovery softness factor condition | VR=400V, IF=50.0A, diF/dt=150A/µs |
| Zero gate voltage collector current tvj 175c max | 200µA |
| Collector emitter saturation voltage tvj 25c condition | VGE=15V, IC=50.0A |
| Diode reverse recovery diode during turn off condition | VR=400V, IF=50.0A, diF/dt=150A/µs |
| Напряжение, В | 650 |
| Ток, А | 50 |
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