Документация
Транзистор биполярный HGTG30N60A4
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Описание
Транзистор IGBT N-канального типа HGTG30N60A4 от ON Semiconductor. Выполнен в корпусе TO-247 для монтажа в отверстия, рассчитан на импульсный ток до 240 А и напряжение до 600 В. Отличается быстрым переключением с временем нарастания 12 нс. Применяется в силовых преобразователях, сварочных инверторах и промышленной автоматике.
Технические характеристики
| Тип | N-Channel IGBT |
| Корпус | TO-247 |
| Тип монтажа | Выводной |
| Артикул | HGTG30N60A4 |
| Power derating factor | 3.7W/°C |
| Switching soa current | 150A |
| Switching soa voltage | 600V |
| Collector current pulsed | 240A |
| Current fall time at 25c | 38ns |
| Current rise time at 25c | 12ns |
| Current fall time at 125c | 70ns |
| Current rise time at 125c | 11ns |
| Диап. темп. хр. | -55 to 150°C |
| Typical fall time at 125c | 60ns |
| Turn on energy eon1 at 25c | 280µJ |
| Turn on energy eon2 at 25c | 600µJ |
| On state gate charge at 15v | 270nC |
| On state gate charge at 20v | 360nC |
| Turn off energy eoff at 25c | 350µJ |
| Turn on energy eon1 at 125c | 280µJ |
| Turn on energy eon2 at 125c | 1160µJ |
| Turn off energy eoff at 125c | 750µJ |
| Gate to emitter voltage pulsed | ±30V |
| Power dissipation total at 25c | 463W |
| Gate to emitter leakage current | ±250nA |
| Gate to emitter plateau voltage | 8.5V |
| Operating frequency at 390v 18a | 200kHz |
| Operating frequency at 390v 30a | >100kHz |
| Collector to emitter voltage max | 600V |
| Current turn on delay time at 25c | 25ns |
| Gate to emitter threshold voltage | 7.0V |
| Current turn off delay time at 25c | 150ns |
| Current turn on delay time at 125c | 24ns |
| Gate to emitter voltage continuous | ±20V |
| Collector current continuous at 25c | 75A |
| Current turn off delay time at 125c | 200ns |
| Тепл. сопр. переход-корпус | 0.27°C/W |
| Collector current continuous at 110c | 60A |
| Диапазон темп. перехода | -55 to 150°C |
| Collector to emitter breakdown voltage | 600V |
| Emitter to collector breakdown voltage | 15V |
| Maximum lead temperature for soldering | 300°C |
| Package body temperature for soldering | 260°C |
| Collector to emitter leakage current at 25c | 250µA |
| Collector to emitter leakage current at 125c | 4.0mA |
| Collector to emitter saturation voltage at 25c | 2.6V |
| Collector to emitter saturation voltage at 125c | 2.0V |
| Тип транзистора | N-Channel IGBT |
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