Документация
Транзистор IGBTs GD400HFY120C2S
У поставщика
У поставщиков
2 шт.
Норм. уп.: 12
Цены поставщиков
Склад 13
В наличии:2 шт
Срок поставки: до недели
Норм. уп.: 12
| Кол-во, шт. | Цена, ₽ |
|---|---|
| от 1 | 12 167,07 |
| от 2 | 11 706,83 |
| от 3 | 11 331,96 |
| от 4 | 11 053,72 |
| от 5 | 10 846,75 |
Описание
Транзистор IGBT GD400HFY120C2S производства STARPOWER представляет собой силовой модуль, предназначенный для высокоэффективного переключения в промышленной электронике. Компонент рассчитан на работу в цепях с высокими токами и напряжениями, что делает его востребованным в преобразователях частоты и сварочном оборудовании. Модуль отличается низкими потерями при переключении и высокой надежностью в условиях интенсивных нагрузок.
Технические характеристики
| Вес | 300g |
| Корпус | 2 in one-package IGBT Module |
| Тип монтажа | Screw M6 |
| Технология | Trench IGBT |
| Описание | 1200V/400A 2 in one-package IGBT Module |
| Артикул | GD400HFY120C2S |
| Применение | Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply |
| Производитель | STARPOWER Semiconductor Ltd. |
| Конфигурация | 2 in one-package |
| Gate charge qg | 3.11μC |
| Fall time tf tj25 | 103ns |
| Rise time tr tj25 | 96ns |
| Fall time tf tj125 | 144ns |
| Fall time tf tj150 | 155ns |
| Mounting torque m6 | 3.0 to 5.0N.m |
| Rise time tr tj125 | 107ns |
| Rise time tr tj150 | 118ns |
| Isolation technology | Isolated copper baseplate using DBC technology |
| Stray inductance lce | 20nH |
| Input capacitance cies | 41.4nF |
| Isolation voltage viso | 4000V |
| Short circuit time tsc | 10μs |
| Тип упаковки | Штучный товар |
| Max power dissipation pd | 2083W |
| Recovered charge qr tj25 | 38.0μC |
| Storage temperature tstg | -40 to +125°C |
| Collector current ic tc25 | 630A |
| Gate emitter voltage vges | ±20V |
| Recovered charge qr tj125 | 66.5μC |
| Recovered charge qr tj150 | 76.0μC |
| Short circuit current isc | 1600A |
| Collector current ic tc100 | 400A |
| Vce sat ic400a vge15v tj25 | 1.70V |
| Vce sat ic400a vge15v tj125 | 1.95V |
| Vce sat ic400a vge15v tj150 | 2.00V |
| Pulsed collector current icm | 800A |
| Описание (англ.) | IGBT Module, Half Bridge, 630 A, 2 V, 2.083 kW, 150 °C, Module |
| Collector cutoff current ices | 5.0mA |
| Diode max forward current ifm | 800A |
| Module lead resistance rcc ee | 0.35mΩ |
| Terminal connection torque m6 | 2.5 to 5.0N.m |
| Turn on delay time td on tj25 | 257ns |
| Vge threshold ic10ma tj25 max | 6.8V |
| Vge threshold ic10ma tj25 min | 5.2V |
| Vge threshold ic10ma tj25 typ | 6.0V |
| Collector emitter voltage vces | 1200V |
| Internal gate resistance rgint | 1.9Ω |
| Max junction temperature tjmax | 175°C |
| Turn on delay time td on tj125 | 268ns |
| Turn on delay time td on tj150 | 278ns |
| Vce sat ic400a vge15v tj25 max | 2.15V |
| Turn off delay time td off tj25 | 628ns |
| Turn on switching loss eon tj25 | 23.5mJ |
| Turn off delay time td off tj125 | 659ns |
| Turn off delay time td off tj150 | 680ns |
| Turn on switching loss eon tj125 | 35.3mJ |
| Turn on switching loss eon tj150 | 38.5mJ |
| Gate emitter leakage current iges | 400nA |
| Reverse recovery energy erec tj25 | 19.0mJ |
| Reverse transfer capacitance cres | 1.16nF |
| Turn off switching loss eoff tj25 | 34.0mJ |
| Reverse recovery energy erec tj125 | 36.6mJ |
| Reverse recovery energy erec tj150 | 41.8mJ |
| Turn off switching loss eoff tj125 | 51.5mJ |
| Turn off switching loss eoff tj150 | 56.7mJ |
| Diode continuous forward current if | 400A |
| Operating junction temperature tjop | -40 to +150°C |
| Diode forward voltage vf if400a tj25 | 1.65V |
| Diode forward voltage vf if400a tj125 | 1.65V |
| Diode forward voltage vf if400a tj150 | 1.65V |
| Peak reverse recovery current irm tj25 | 285A |
| Peak reverse recovery current irm tj125 | 380A |
| Peak reverse recovery current irm tj150 | 399A |
| Diode forward voltage vf if400a tj25 max | 2.10V |
| Diode repetitive peak reverse voltage vrrm | 1200V |
| Thermal resistance case heatsink igbt rthch | 0.035K/W |
| Thermal resistance junction case igbt rthjc | 0.072K/W |
| Thermal resistance case heatsink diode rthch | 0.046K/W |
| Thermal resistance junction case diode rthjc | 0.095K/W |
| Thermal resistance case heatsink module rthch | 0.010K/W |
| Напряжение, В | 1200 |
| Ток, А | 400 |
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