Документация
GD35FSY120L2S, IGBT модуль, 3 Phase Bridge with NTC, 1200V, 35A, L2.1
У поставщика
ПроизводительSTARPOWER
У поставщиков
22 шт.
Норм. уп.: 3
Цены поставщиков
Склад 12
В наличии:22 шт
Срок поставки: до недели
Норм. уп.: 3
Минимальная партия: 30 шт
| Кол-во, шт. | Цена, ₽ |
|---|---|
| от 1 | 2 380,50 |
| от 3 | 2 109,61 |
Технические характеристики
| Тип | IGBT Module |
| Вес | 24g |
| Корпус | Module (6 in one-package, DBC isolated) |
| Тип монтажа | Screw clamp |
| Gate charge | 0.33μC |
| Ntc b 25 50 | 3375K |
| Ntc b 25 80 | 3411K |
| Артикул | GD35FSY120L2S |
| Ntc b 25 100 | 3433K |
| Конфигурация | 3 Phase Bridge with NTC |
| Fall time 25c | 323ns |
| Rise time 25c | 28ns |
| Vce sat max 25c | 2.15V |
| Vce sat typ 25c | 1.70V |
| Stray inductance | 25nH |
| Вх. емкость | 2.45nF |
| Напр. изоляции | 2500V RMS |
| Vge threshold max | 6.8V |
| Vge threshold min | 5.2V |
| Vge threshold typ | 6.0V |
| Ntc resistance 25c | 5.0kΩ |
| Темп. хранения | -40 to +125°C |
| Ntc power dissipation | 20.0mW |
| Макс. рассеиваемая мощность | 301W |
| Ток КЗ | 140A |
| Module lead resistance | 4.50mΩ |
| Short circuit duration | 10μs |
| Turn on delay time 25c | 156ns |
| Turn off delay time 25c | 215ns |
| Gate emitter voltage max | ±20V |
| Gate leakage current max | 400nA |
| Internal gate resistance | 0Ω |
| Макс. темп. перехода | 175°C |
| Mounting force per clamp | 20-50 N |
| Diode recovered charge 25c | 1.9μC |
| Turn on switching loss 25c | 1.94mJ |
| Макс.напр.к-э,В | 1200 |
| Diode recovered charge 125c | 3.1μC |
| Diode recovered charge 150c | 3.5μC |
| Turn off switching loss 25c | 2.55mJ |
| Turn on switching loss 125c | 2.38mJ |
| Turn on switching loss 150c | 2.60mJ |
| Collector current pulsed 1ms | 70A |
| Обратная проходная емкость | 0.14nF |
| Turn off switching loss 125c | 3.83mJ |
| Turn off switching loss 150c | 4.02mJ |
| Макс. напр. К-Э | 1200V |
| Diode forward voltage max 25c | 2.45V |
| Diode forward voltage typ 25c | 2.00V |
| Diode peak reverse current 25c | 43A |
| Рабочая температура перехода | -40 to +150°C |
| Diode peak reverse current 125c | 51A |
| Diode peak reverse current 150c | 53A |
| Collector current continuous 25c | 70A |
| Collector current continuous 100c | 35A |
| Diode reverse recovery energy 25c | 1.01mJ |
| Diode reverse recovery energy 125c | 2.37mJ |
| Diode reverse recovery energy 150c | 2.77mJ |
| Thermal resistance case heatsink igbt | 0.548 K/W |
| Thermal resistance case heatsink diode | 0.952 K/W |
| Thermal resistance case heatsink module | 0.058 K/W |
| Thermal resistance junction case igbt max | 0.498 K/W |
| Thermal resistance junction case igbt typ | 0.453 K/W |
| Thermal resistance junction case diode max | 0.865 K/W |
| Thermal resistance junction case diode typ | 0.786 K/W |
| Номинальный ток одиночного тр-ра,А | 35 |