Документация
Модуль IGBT 1200В 262А GD200HFU120C2S
У поставщика
ПроизводительSTARPOWER
У поставщиков
5 шт.
Норм. уп.: 12
Цены поставщиков
Склад 13
В наличии:5 шт
Срок поставки: до недели
Норм. уп.: 12
| Кол-во, шт. | Цена, ₽ |
|---|---|
| от 1 | 5 588,15 |
| от 2 | 5 357,64 |
| от 3 | 5 169,89 |
| от 4 | 5 030,54 |
| от 5 | 4 926,88 |
Описание
Модуль IGBT GD200HFU120C2S от STARPOWER рассчитан на напряжение 1200 В и ток 262 А. Компонент выполнен в прочном корпусе для эффективного отвода тепла. Подходит для мощных преобразователей частоты и промышленной автоматики.
Технические характеристики
| Вес | 300g |
| Корпус | модуль |
| Особенности | NPT IGBT technology, 10μs short circuit capability, Low switching losses, VCE(sat) with positive temperature coefficient, Low inductance case, Fast & soft reverse recovery anti-parallel FWD, Isolated copper baseplate using DBC technology |
| Тип монтажа | Screw M5 terminal, M6 mounting |
| Технология | NPT IGBT |
| Описание | IGBT Module 1200V/200A 2 in one-package |
| Артикул | GD200HFU120C2S |
| Применение | Switching mode power supply, Inductive heating, Electronic welder |
| Производитель | STARPOWER Semiconductor Ltd. |
| Конфигурация | 2 in one-package |
| Gate charge qg | 2.10μC |
| Fall time tf 25c | 63ns |
| Rise time tr 25c | 40ns |
| Fall time tf 125c | 78ns |
| Rise time tr 125c | 44ns |
| Mounting torque m6 | 3.0 to 5.0 N.m |
| Isolation technology | Isolated copper baseplate using DBC technology |
| Stray inductance lce | 30nH |
| Input capacitance cies | 13.0nF |
| Isolation voltage viso | 2500V RMS, f=50Hz, t=1min |
| Short circuit time tsc | ≤10μs |
| Recovered charge qr 25c | 13.3μC |
| Тип упаковки | Штучный товар |
| Max power dissipation pd | 1315W |
| Recovered charge qr 125c | 23.0μC |
| Collector current ic tc25 | 262A |
| Collector current ic tc65 | 200A |
| Gate emitter voltage vges | ±20V |
| Short circuit current isc | 1300A |
| Diode forward voltage vf 25c | 1.95V min, 2.40V max |
| Pulsed collector current icm | 400A |
| Turn on delay time td on 25c | 87ns |
| Описание (англ.) | IGBT MODULE, 1.2KV, 262A |
| Diode forward voltage vf 125c | 2.00V typ |
| Diode max forward current ifm | 400A |
| Module lead resistance rcc ee | 0.35mΩ |
| Terminal connection torque m5 | 2.5 to 5.0 N.m |
| Turn on delay time td on 125c | 88ns |
| Collector cut off current ices | 5.0mA |
| Collector emitter voltage vces | 1200V |
| Internal gate resistance rgint | 1.3Ω |
| Max junction temperature tjmax | 150°C |
| Диапазон температур хранения | -40 to +125°C |
| Turn off delay time td off 25c | 451ns |
| Turn on switching loss eon 25c | 6.8mJ |
| Turn off delay time td off 125c | 483ns |
| Turn on switching loss eon 125c | 11.4mJ |
| Reverse recovery energy erec 25c | 6.6mJ |
| Turn off switching loss eoff 25c | 11.9mJ |
| Gate emitter leakage current iges | 400nA |
| Reverse recovery energy erec 125c | 10.5mJ |
| Reverse transfer capacitance cres | 0.85nF |
| Turn off switching loss eoff 125c | 13.5mJ |
| Diode continuous forward current if | 200A |
| Operating junction temperature tjop | -40 to +125°C |
| Gate emitter threshold voltage vge th | 4.4V min, 5.3V typ, 6.0V max |
| Peak reverse recovery current irm 25c | 236A |
| Peak reverse recovery current irm 125c | 269A |
| Diode repetitive peak reverse voltage vrrm | 1200V |
| Thermal resistance case to heatsink igbt rthch | 0.029K/W |
| Thermal resistance junction to case igbt rthjc | 0.095K/W |
| Thermal resistance case to heatsink diode rthch | 0.063K/W |
| Thermal resistance junction to case diode rthjc | 0.202K/W |
| Collector emitter saturation voltage vce sat 25c | 3.00V min, 3.45V typ |
| Thermal resistance case to heatsink module rthch | 0.010K/W |
| Collector emitter saturation voltage vce sat 125c | 3.80V typ |
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