Документация
IGBT модуль 1200В 155А 511Вт 150°С
У поставщика
ПроизводительSTARPOWER
КатегорияТранзисторы
У поставщиков
24 шт.
Норм. уп.: 2
Цены поставщиков
Склад 13
В наличии:23 шт
Срок поставки: до недели
Норм. уп.: 24
| Кол-во, шт. | Цена, ₽ |
|---|---|
| от 1 | 2 800,25 |
| от 2 | 2 675,68 |
| от 3 | 2 574,23 |
| от 5 | 2 498,90 |
| от 9 | 2 442,88 |
Склад 12
В наличии:1 шт
Срок поставки: до недели
Норм. уп.: 2
Минимальная партия: 20 шт
| Кол-во, шт. | Цена, ₽ |
|---|---|
| от 1 | 3 312,00 |
| от 2 | 2 835,90 |
| от 20 | 2 752,09 |
Описание
IGBT модуль STARPOWER GD100HFY120C1S на 1200 В и 155 А. Модуль рассчитан на рассеиваемую мощность до 511 Вт и рабочую температуру до 150 °С, выполнен в корпусе с медным основанием и керамической изоляцией DBC. Подходит для применения в промышленной автоматике, частотных преобразователях и силовых источниках питания.
Технические характеристики
| Тип | IGBT Module |
| Вес | 150g |
| Корпус | Module with isolated copper baseplate (DBC) |
| Тип монтажа | THT (screw terminals) |
| Технология | Trench IGBT |
| Вес тип. | 150g |
| Gate charge | 0.78 μC |
| Артикул | GD100HFY120C1S |
| Производитель | STARPOWER |
| Тип упаковки | Module (copper baseplate, DBC isolation) |
| Конфигурация | 2-in-1 (half bridge) |
| Тип монтажа | THT |
| Монтажный винт | M6 |
| Terminal screw | M5 |
| Gate charge typ | 0.78μC |
| Lead resistance | 0.75 mΩ |
| Stray inductance | 30 nH |
| Вх. емкость | 10.4 nF |
| Напр. изоляции | 4000V RMS |
| Темп. хранения | -40 to +125°C |
| Current diode pulsed | 200A |
| Fall time typ at 25c | 86ns |
| Rise time typ at 25c | 32ns |
| Stray inductance typ | 30nH |
| Current short circuit | 400A |
| Fall time typ at 125c | 165ns |
| Fall time typ at 150c | 186ns |
| Тип. входная емкость | 10.4nF |
| Изол. напр. RMS | 4000V |
| Макс. рассеиваемая мощность | 511W |
| Rise time typ at 125c | 42ns |
| Rise time typ at 150c | 43ns |
| Threshold voltage max | 6.8V |
| Threshold voltage min | 5.2V |
| Threshold voltage typ | 6.0V |
| Тип упаковки | Штучный товар |
| Импульсный ток коллектора | 200A |
| Current diode continuous | 100A |
| Gate emitter voltage max | ±20V |
| Gate resistance internal | 7.5Ω |
| Internal gate resistance | 7.5Ω |
| Макс. темп. перехода | 175°C |
| Pulsed collector current | 200A |
| Short circuit capability | 10 μs |
| Short circuit rated time | 10μs |
| Switching fall time 125C | 165 ns |
| Switching rise time 125C | 42 ns |
| Voltage gate emitter max | ±20V |
| Диап. темп. хр. | -40 to +125°C |
| Saturation voltage max 25C | 2.15V |
| Saturation voltage typ 25C | 1.70V |
| Voltage reverse peak diode | 1200V |
| Макс.напр.к-э,В | 1200 |
| Collector current dc at 25c | 155A |
| Saturation voltage typ 125C | 1.95V |
| Saturation voltage typ 150C | 2.00V |
| Switching turn on loss 125C | 9.10 mJ |
| Collector current dc at 100c | 100A |
| Макс. ток отсечки коллектора | 1.0mA |
| Mounting torque screw m6 max | 5.0N·m |
| Mounting torque screw m6 min | 3.0N·m |
| Reverse recovery charge 125C | 16.2 μC |
| Reverse recovery energy 125C | 5.70 mJ |
| Обратная проходная емкость | 0.29 nF |
| Switching turn off loss 125C | 9.35 mJ |
| Switching turn on delay 125C | 180 ns |
| Описание (англ.) | IGBT MOD, 1.2KV, 155A, 150DEG C, 511W |
| Макс. напр. К-Э | 1200V |
| Diode forward voltage typ 25C | 1.70V |
| Short circuit current at 150c | 400A |
| Switching turn off delay 125C | 470 ns |
| Turn on delay time typ at 25c | 170ns |
| Напряжение коллектор-эмиттер макс. | 1200V |
| Diode forward voltage typ 125C | 1.65V |
| Junction temperature operating | -40 to +150°C |
| Turn off delay time typ at 25c | 360ns |
| Turn on delay time typ at 125c | 180ns |
| Turn on delay time typ at 150c | 181ns |
| Turn off delay time typ at 125c | 470ns |
| Turn off delay time typ at 150c | 480ns |
| Current collector continuous 25C | 155A |
| Diode continuous forward current | 100A |
| Diode forward voltage max at 25c | 2.15V |
| Diode forward voltage typ at 25c | 1.70V |
| Gate emitter leakage current max | 100nA |
| Обр. проходная емкость тип. | 0.29nF |
| Current collector continuous 100C | 100A |
| Diode forward voltage typ at 125c | 1.65V |
| Diode forward voltage typ at 150c | 1.65V |
| Diode recovered charge typ at 25c | 9.0μC |
| Turn on switching loss typ at 25c | 5.90mJ |
| Diode recovered charge typ at 125c | 16.2μC |
| Diode recovered charge typ at 150c | 19.5μC |
| Gate emitter threshold voltage max | 6.8V |
| Gate emitter threshold voltage min | 5.2V |
| Gate emitter threshold voltage typ | 6.0V |
| Reverse recovery peak current 125C | 120 A |
| Turn off switching loss typ at 25c | 6.05mJ |
| Turn on switching loss typ at 125c | 9.10mJ |
| Turn on switching loss typ at 150c | 10.0mJ |
| Turn off switching loss typ at 125c | 9.35mJ |
| Turn off switching loss typ at 150c | 10.5mJ |
| Diode maximum forward current pulsed | 200A |
| Диапазон темп. перехода | -40 to +150°C |
| Diode repetitive peak reverse voltage | 1200V |
| Terminal connection torque screw m5 max | 5.0N·m |
| Terminal connection torque screw m5 min | 2.5N·m |
| Case to heatsink thermal resistance igbt | 0.158K/W |
| Diode reverse recovery energy typ at 25c | 3.32mJ |
| Junction to case thermal resistance igbt | 0.293K/W |
| Thermal resistance case to heatsink igbt | 0.158 K/W |
| Thermal resistance junction to case igbt | 0.293 K/W |
| Case to heatsink thermal resistance diode | 0.272K/W |
| Diode reverse recovery energy typ at 125c | 5.70mJ |
| Diode reverse recovery energy typ at 150c | 7.13mJ |
| Junction to case thermal resistance diode | 0.505K/W |
| Thermal resistance case to heatsink diode | 0.272 K/W |
| Thermal resistance junction to case diode | 0.505 K/W |
| Thermal resistance case to heatsink module | 0.050 K/W |
| Module lead resistance terminal to chip typ | 0.75mΩ |
| Case to heatsink thermal resistance per module | 0.050K/W |
| Diode peak reverse recovery current typ at 25c | 110A |
| Collector emitter saturation voltage max at 25c | 2.15V |
| Collector emitter saturation voltage typ at 25c | 1.70V |
| Diode peak reverse recovery current typ at 125c | 120A |
| Diode peak reverse recovery current typ at 150c | 123A |
| Collector emitter saturation voltage typ at 125c | 1.95V |
| Collector emitter saturation voltage typ at 150c | 2.00V |
| Номинальный ток одиночного тр-ра,А | 100 |
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