Документация
Транзистор биполярный IGBT со встроенным диодом 600В/15А
У поставщика
ПроизводительSTARPOWER
У поставщиков
178 шт.
Норм. уп.: 50
Цены поставщиков
Склад 13
В наличии:178 шт
Срок поставки: до недели
Норм. уп.: 50
Минимальная партия: 16 шт
| Кол-во, шт. | Цена, ₽ |
|---|---|
| от 1 | 47,68 |
| от 24 | 45,30 |
| от 50 | 43,00 |
| от 100 | 41,15 |
| от 200 | 40,14 |
Описание
Транзистор IGBT со встроенным диодом от STARPOWER рассчитан на напряжение 600 В и ток 15 А. Компонент выполнен в корпусе TO-220, что упрощает монтаж и отвод тепла. Подходит для импульсных источников питания и силовых цепей промышленной автоматики.
Технические характеристики
| Тип | IGBT Discrete |
| Корпус | TO-220 |
| Компонент | DG15X06T1 |
| Без свинца | Да |
| Rthjc igbt | 0.638K/W |
| Технология | Low VCE(sat) Fast IGBT |
| Описание | 600V/15A IGBT with Diode |
| Rthjc diode | 1.030K/W |
| Применение | Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply |
| Производитель | DOSEMI / STARPOWER Semiconductor Ltd. |
| Монтажный винт | M3 |
| Qg gate charge | 0.10uC |
| Vge test drive | ±15V |
| Момент затяжки | 0.6N.m |
| Tf fall time 25c | 68ns |
| Tr rise time 25c | 9ns |
| Vcc test voltage | 300V |
| Tf fall time 125c | 88ns |
| Tf fall time 150c | 96ns |
| Tr rise time 125c | 12ns |
| Tr rise time 150c | 12ns |
| Vces test voltage | 600V |
| Rg test resistance | 22Ω |
| Vce sat 15a 15v 25c | 1.45V |
| Eon turn on loss 25c | 0.20mJ |
| Vce sat 15a 15v 125c | 1.60V |
| Vce sat 15a 15v 150c | 1.70V |
| Vf diode forward 25c | 1.60V |
| Eon turn on loss 125c | 0.26mJ |
| Eon turn on loss 150c | 0.29mJ |
| Vf diode forward 125c | 1.55V |
| Vf diode forward 150c | 1.50V |
| Cies input capacitance | 1.74nF |
| Di dt reverse recovery | 1800A/μs |
| Eoff turn off loss 25c | 0.27mJ |
| Vcc short circuit test | 360V |
| Eoff turn off loss 125c | 0.35mJ |
| Eoff turn off loss 150c | 0.37mJ |
| Qr recovered charge 25c | 0.88uC |
| Td on turn on delay 25c | 11ns |
| Vce sat 15a 15v 25c max | 1.90V |
| Тип упаковки | Tube (туба) |
| Ic collector current 25c | 27A |
| Qr recovered charge 125c | 1.54uC |
| Qr recovered charge 150c | 1.87uC |
| Td on turn on delay 125c | 11ns |
| Td on turn on delay 150c | 11ns |
| Ts soldering temperature | 260°C |
| Tstg storage temperature | -55 to +150°C |
| Vf diode forward 25c max | 2.05V |
| Ic collector current 100c | 24A |
| Isc short circuit current | 75A |
| Rthja junction to ambient | 62K/W |
| Td off turn off delay 25c | 88ns |
| Vges gate emitter voltage | ±20V |
| Td off turn off delay 125c | 104ns |
| Td off turn off delay 150c | 112ns |
| Di dt reverse recovery 150c | 100A/μs |
| Tj max junction temperature | 175°C |
| Icm pulsed collector current | 45A |
| Описание (англ.) | 600 V, 15 A IGBT with anti‑parallel diode |
| Ifm diode max forward current | 45A |
| Pd max power dissipation 175c | 235W |
| Ices collector cut off current | 1.0mA |
| Rgint internal gate resistance | 0Ω |
| Vces collector emitter voltage | 600V |
| Erec reverse recovery energy 25c | 0.18mJ |
| Cres reverse transfer capacitance | 0.03nF |
| Erec reverse recovery energy 125c | 0.31mJ |
| Erec reverse recovery energy 150c | 0.41mJ |
| Iges gate emitter leakage current | 400nA |
| Vge th gate emitter threshold max | 6.5V |
| Vge th gate emitter threshold min | 5.2V |
| Vge th gate emitter threshold typ | 5.8V |
| If diode continuous forward current | 27A |
| Tjop operating junction temperature | -40 to +175°C |
| Irm peak reverse recovery current 25c | 25.3A |
| Irm peak reverse recovery current 125c | 27.5A |
| Irm peak reverse recovery current 150c | 28.6A |
| Vrr max repetitive peak reverse voltage | 600V |
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