Документация
IGBT Модуль 1700В, 450А, полумостовой
У поставщика
ПроизводительLeapers Semiconductor
КатегорияТранзисторы
У поставщиков
3 923 шт.
Норм. уп.: 10
Цены поставщиков
Склад 13
В наличии:3 923 шт
Срок поставки: до недели
Норм. уп.: 10
| Кол-во, шт. | Цена, ₽ |
|---|---|
| от 1 | 13 431,60 |
| от 2 | 13 027,13 |
| от 3 | 12 756,57 |
| от 4 | 12 518,57 |
| от 7 | 12 357,64 |
Описание
IGBT-модуль от Leapers Semiconductor в полумостовой конфигурации. Рассчитан на напряжение 1700 В и ток 450 А, максимальная рабочая температура кристалла — 175 °C, оснащён встроенным терморезистором. Применяется в мощных преобразователях частоты и промышленной автоматике.
Технические характеристики
| CTI | >225 |
| Тип | IGBT Module |
| Вес | 420g |
| Артикул | DFI450HF17I4RE1 |
| Конфигурация | Half Bridge |
| Тип монтажа | THT (screw mount) |
| Тип упаковки | Half-bridge IGBT module with screw terminals |
| Ntc b value b25 50 | 3375K |
| Ntc b value b25 80 | 3411K |
| Ntc b value b25 100 | 3433K |
| Blocking voltage ces | 1700V |
| Mounting torque m5 m6 | 3 to 6 Nm |
| Тип упаковки | Bulk (россыпь) |
| Diode forward current dc | 500A |
| Gate emitter voltage max | ±20V |
| Collector current nominal | 450A |
| Module baseplate material | Cu |
| Ntc resistance at 25c r25 | 5kΩ |
| Диап. темп. хр. | -40 to 125°C |
| Диапазон темп. перехода | -40 to 150°C |
| Internal gate resistor tj25 | 1.7Ω |
| Module lead resistance tc25 | 0.8mΩ |
| Описание (англ.) | IGBT module, half-bridge, Vces 1700 V, Ic 450 A, Tj max 175 °C, thermistor inside |
| Pulse collector current tp1ms | 1000A |
| Isolation voltage rms 50hz 1min | 3.4kV |
| Ntc deviation at 100c delta r r | ±5% |
| Diode i2t value vr0 tp10ms tj125 | 20000A²s |
| Ntc power dissipation at 25c p25 | 20mW |
| Gate charge vge minus15 to plus15 | 4.6µC |
| Maximum power dissipation tc25 tj150 | 3125W |
| Continuous collector current dc tc100 | 500A |
| Creepage distance terminal to heatsink | 14.5mm |
| Creepage distance terminal to terminal | 13mm |
| Clearance distance terminal to heatsink | 12.5mm |
| Clearance distance terminal to terminal | 10mm |
| Input capacitance cies vce25 vge0 f1mhz | 36nF |
| Diode repetitive peak forward current tp1ms | 1000A |
| Diode forward voltage vf if600 vge0 tj25 typ | 1.9V |
| Gate threshold voltage vge th ic18ma vce vge | 5.2 to 6.4V |
| Diode forward voltage vf if600 vge0 tj150 typ | 2.0V |
| Saturation voltage vce sat ic450 vge15 tj25 typ | 1.85V |
| Fall time tf vcc900 ic450 vge15 8 rg3p3 tj25 typ | 405ns |
| Rise time tr vcc900 ic450 vge15 8 rg3p3 tj25 typ | 170ns |
| Saturation voltage vce sat ic450 vge15 tj125 typ | 2.25V |
| Saturation voltage vce sat ic450 vge15 tj150 typ | 2.35V |
| Thermal resistance igbt junction to case rth j c | 0.04°C/W |
| Fall time tf vcc900 ic450 vge15 8 rg3p3 tj150 typ | 680ns |
| Rise time tr vcc900 ic450 vge15 8 rg3p3 tj150 typ | 210ns |
| Thermal resistance diode junction to case rth j c | 0.06°C/W |
| Reverse transfer capacitance cres vce25 vge0 f1mhz | 1.15nF |
| Gate emitter leakage current iges vge20 vce0 tj25 max | 1.0µA |
| Turn on energy eon vcc900 ic450 vge15 8 rg3p3 tj25 typ | 205mJ |
| Turn on energy eon vcc900 ic450 vge15 8 rg3p3 tj150 typ | 320mJ |
| Turn off energy eoff vcc900 ic450 vge15 8 rg3p3 tj25 typ | 105mJ |
| Short circuit current sc vge lt15 vcc1000 tp lt10us tj150 | 2300A |
| Thermal resistance case to sink rth c s conductive grease | 0.015°C/W |
| Turn off energy eoff vcc900 ic450 vge15 8 rg3p3 tj150 typ | 153mJ |
| Collector emitter cutoff current ices vce1700 vge0 tj25 max | 3.0mA |
| Turn on delay time tdon vcc900 ic450 vge15 8 rg3p3 tj25 typ | 335ns |
| Recovered charge qrr vrr800 vge minus8 if450 vcc900 tj25 typ | 79µC |
| Turn on delay time tdon vcc900 ic450 vge15 8 rg3p3 tj150 typ | 360ns |
| Recovered charge qrr vrr800 vge minus8 if450 vcc900 tj150 typ | 184µC |
| Reverse recovery time trr vcc900 ic450 vge15 8 rg3p3 tj25 typ | 1.09µs |
| Turn off delay time tdoff vcc900 ic450 vge15 8 rg3p3 tj25 typ | 655ns |
| Reverse recovery time trr vcc900 ic450 vge15 8 rg3p3 tj150 typ | 1.58µs |
| Turn off delay time tdoff vcc900 ic450 vge15 8 rg3p3 tj150 typ | 800ns |
| Reverse recovered energy err vcc900 vge15 8 if450 rg3p3 tj25 typ | 35mJ |
| Reverse recovered energy err vcc900 vge15 8 if450 rg3p3 tj150 typ | 90mJ |
| Peak reverse recovery current irm vcc900 ic450 vge15 8 rg3p3 tj25 typ | 199A |
| Peak reverse recovery current irm vcc900 ic450 vge15 8 rg3p3 tj150 typ | 250A |
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