Документация
Симистор 600В 4А 5мА 3Q BTA204X-600D,127
У поставщика
ПроизводительWeEn
У поставщиков
426 шт.
Норм. уп.: 50
Цены поставщиков
Склад 13
В наличии:426 шт
Срок поставки: до недели
Норм. уп.: 50
Минимальная партия: 10 шт
| Кол-во, шт. | Цена, ₽ |
|---|---|
| от 1 | 81,96 |
| от 28 | 75,88 |
| от 50 | 70,90 |
| от 150 | 67,18 |
| от 250 | 64,40 |
Описание
Симистор BTA204X-600D от WeEn — это чувствительный триак с управлением от логических уровней. Рассчитан на напряжение до 600 В и ток до 4 А, выпускается в изолированном корпусе TO-220F. Подходит для схем промышленной автоматики и бытовой техники, где требуется надежная коммутация нагрузки.
Технические характеристики
| I tsm | T 20ms: 25A; T 16 7ms: 27A; Condition: full sine wave; Tj = 25C prior to surge |
| V drm | 600V |
| Серия | BTA204X series D, E and F |
| I t rms | 4A |
| Корпус | TO-220F |
| Цоколевка | Pin1: main terminal 1 (T1); Pin2: main terminal 2 (T2); Pin3: gate (G); Mounting base: isolated |
| Особенности | Suitable for interfacing with low power drivers, including microcontrollers, Isolated mounting base |
| Тип монтажа | Выводной |
| Кол-во выводов | 3 |
| I2t fusing | 3.1 A2s |
| V drm note | Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/us. |
| Описание | Three quadrant triacs guaranteed commutation |
| Артикул | BTA204X-600D |
| Применение | Motor control, High inductive loads |
| Версия корпуса | SOT186A |
| Dl dt repetitive | 100 A/us |
| I t rms condition | full sine wave; Ths <= 92C |
| C isol capacitance | 10pF |
| I h holding current | 6mA |
| I2t fusing condition | t = 10 ms |
| I l latching current | T2+ G+: 6mA; T2+ G-: 9mA; T2- G-: 6mA; Condition: VD = 12V; IGT = 0.1A |
| P gm peak gate power | 5W |
| V t on state voltage | 1.7V |
| I gm peak gate current | 2A |
| Тип упаковки | Tube (туба) |
| T j junction temperature | 125 C |
| V t on state voltage typ | 1.4V |
| I gt gate trigger current | T2+ G+: 5mA; T2+ G-: 5mA; T2- G-: 5mA; Condition: VD = 12V; IT = 0.1A |
| P g av average gate power | 0.5W |
| T stg storage temperature | -40 to +150 C |
| V gt gate trigger voltage | 1.5V |
| Dl dt repetitive condition | IT = 6A; IG = 0.2A; dIG/dt = 0.2A/us |
| Dv dt critical rate of rise | 20 V/us |
| R th j a thermal resistance | 55 K/W |
| C isol capacitance condition | f = 1MHz; pin2 to external heatsink |
| R th j hs thermal resistance | Condition: full or half cycle; With heatsink compound: 5.5 K/W; Without heatsink compound: 7.2 K/W |
| V isol rms isolation voltage | 2500V |
| Описание (англ.) | TRIAC SENS GATE 600V 4A TO220-3 |
| I d off state leakage current | 0.5mA |
| I h holding current condition | VD = 12V; IGT = 0.1A |
| V gt gate trigger voltage typ | 0.7V |
| V t on state voltage condition | IT = 5A |
| Di dt com critical rate of change | Value 1: 1.1 A/us; Value 2: 4.5 A/us; Condition 1: VDM = 400V; Tj = 125C; IT(RMS) = 4A; dVcom/dt = 10V/us; gate open circuit; Condition 2: VDM = 400V; Tj = 125C; IT(RMS) = 4A; dVcom/dt = 0.1V/us; gate open circuit |
| I d off state leakage current typ | 0.1mA |
| T gt gate controlled turn on time | 2us |
| P g av average gate power condition | over any 20ms period |
| V gt gate trigger voltage condition | VD = 12V; IT = 0.1A |
| V gt gate trigger voltage high temp | 0.4V |
| Dv dt critical rate of rise condition | VDM = 67% VDRM(max); Tj = 125C; exponential waveform; gate open circuit |
| R th j a thermal resistance condition | in free air |
| V isol rms isolation voltage condition | f = 50 Hz to 60 Hz; sinusoidal waveform; R.H. <= 65%; clean and dust free; from all three terminals to external heatsink |
| I d off state leakage current condition | VD = VDRM(max); Tj = 125C |
| T gt gate controlled turn on time condition | ITM = 20A; VD = VDRM(max); IG = 0.1A; dIG/dt = 5A/us |
| V gt gate trigger voltage high temp condition | VD = 400V; IT = 0.1A; Tj = 125C |
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