SELECT `modx_site_content_tmc`.`manuf`,`modx_site_content_tmc`.`raspr`,`modx_site_content_tmc`.`will`,`modx_site_content_tmc`.`pod_ost`,`modx_site_content_sklad`.`nelikvid`,`modx_site_content_sklad`.`price`,`modx_site_content_sklad`.`price2`,`modx_site_content_sklad`.`price3`,`modx_site_content_sklad`.`price4`,`modx_site_content_sklad`.`interval`,`modx_site_content_sklad`.`interval2`,`modx_site_content_sklad`.`interval3`,`modx_site_content_sklad`.`interval4`,`modx_site_content_sklad`.`packing`,`modx_site_content_tmc`.`unit`,`qty_msk`-`rez_msk` + `qty`-`rez_minsk` as `qt`,`modx_site_content_sklad`.`qty_msk`,`modx_site_content_sklad`.`rez_msk`,`modx_site_content_sklad`.`qty`,`modx_site_content_sklad`.`rez_minsk` FROM `modx_site_content_tmc` LEFT JOIN `modx_site_content_sklad` ON `modx_site_content_sklad`.`sku`=`modx_site_content_tmc`.`sku` WHERE `resource`=284219
SELECT `modx_site_content_tmc`.`manuf`,`modx_site_content_tmc`.`raspr`,`modx_site_content_tmc`.`will`,`modx_site_content_tmc`.`pod_ost`,`modx_site_content_sklad`.`nelikvid`,`modx_site_content_sklad`.`price`,`modx_site_content_sklad`.`price2`,`modx_site_content_sklad`.`price3`,`modx_site_content_sklad`.`price4`,`modx_site_content_sklad`.`interval`,`modx_site_content_sklad`.`interval2`,`modx_site_content_sklad`.`interval3`,`modx_site_content_sklad`.`interval4`,`modx_site_content_sklad`.`packing`,`modx_site_content_tmc`.`unit`,`qty_msk`-`rez_msk` + `qty`-`rez_minsk` as `qt`,`modx_site_content_sklad`.`qty_msk`,`modx_site_content_sklad`.`rez_msk`,`modx_site_content_sklad`.`qty`,`modx_site_content_sklad`.`rez_minsk` FROM `modx_site_content_tmc` LEFT JOIN `modx_site_content_sklad` ON `modx_site_content_sklad`.`sku`=`modx_site_content_tmc`.`sku` WHERE `resource`=284219
Тип
полевые (FETs, MOSFETs)
Технология монтажа
Surface Mount
Configuration
2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C
9.2A
Drain to Source Voltage (Vdss)
40V
FET Feature
Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs
15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
580pF @ 20V
Rds On (Max) @ Id, Vgs
20mOhm @ 10A, 10V
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
2.5V @ 250µA
Максимальная рассеиваемая мощность
3.1W
Рабочая Температура
-55°C ~ 150°C (TJ)
Тип
полевые (FETs, MOSFETs)
Технология монтажа
Surface Mount
Configuration
2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C
9.2A
Drain to Source Voltage (Vdss)
40V
FET Feature
Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs
15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
580pF @ 20V
Rds On (Max) @ Id, Vgs
20mOhm @ 10A, 10V
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
2.5V @ 250µA
Максимальная рассеиваемая мощность
3.1W
Рабочая Температура
-55°C ~ 150°C (TJ)
